Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: TVSdiodeDescription: Silicon carbide Schottky diode98391+$41.847210+$39.4462100+$37.6625250+$37.3881500+$37.11371000+$36.80502500+$36.53065000+$36.3591 -
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Category: TVSdiodeDescription: Silicon carbide Schottky diode54421+$39.364510+$37.1059100+$35.4281250+$35.1699500+$34.91181000+$34.62142500+$34.36335000+$34.2020 -
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Category: TVSdiodeDescription: THINQ SiCSchottky diode thin Q SiC Schottky diode69615+$17.902250+$17.1371200+$16.7087500+$16.60161000+$16.49452500+$16.37215000+$16.29567500+$16.2191 -
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Category: TVSdiodeDescription: INFINEON IDP08E65D1XKSA1 Standard power diode, single, 650 V, 8 A, 1.35 V, 51 ns, 64 A46775+$4.656225+$4.311350+$4.0698100+$3.9664500+$3.89742500+$3.81115000+$3.776710000+$3.7249 -
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Category: Power diodeDescription: IDH20G120C5 Series 1200 V 56 A 5th generation ThinQ! ™ SiC Schottky diode TO-220-268991+$48.567010+$45.7804100+$43.7103250+$43.3918500+$43.07331000+$42.71512500+$42.39665000+$42.1975 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon88095+$5.493225+$5.086350+$4.8014100+$4.6794500+$4.59802500+$4.49625000+$4.455610000+$4.3945 -
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Category: TVSdiodeDescription: INFINEON IDH10S120 Diode, silicon carbide Schottky, SIC, thinQ 2G 1200V series, single, 1.2 kV, 10 A, 36 nC, TO-22092381+$67.424510+$64.4930100+$63.9653250+$63.5549500+$62.91001000+$62.61682500+$62.20645000+$61.8547 -
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Category: TVSdiodeDescription: IDH20G65C5 Series 650V 20A 5th generation thinQ! ™ SiC Schottky diode PG-TO-220-235551+$53.394510+$50.3309100+$48.0551250+$47.7049500+$47.35481000+$46.96092500+$46.61085000+$46.3920 -
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Category: Schottky diodeDescription: INFINEON IDH08SG60CXKSA1 Diode, silicon carbide Schottky, SIC, thinQ 3G 600V series, single, 600V, 8A, 12 nC, TO-22078141+$36.937910+$34.8186100+$33.2441250+$33.0019500+$32.75971000+$32.48722500+$32.24505000+$32.0936 -
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Category: Schottky diodeDescription: Infineon Diode IDH10SG60CXKSA1 Schottky, Io=10A, 2-pin TO-220 package22285+$24.189850+$23.1560200+$22.5771500+$22.43241000+$22.28772500+$22.12235000+$22.01897500+$21.9155 -
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Category: Schottky diodeDescription: INFINEON IDH12SG60CXKSA1 Diode, silicon carbide Schottky, SIC, thinQ 3G 600V series, single, 600V, 12A, 19nC, TO-220911510+$8.7360100+$8.2992500+$8.00801000+$7.99342000+$7.93525000+$7.86247500+$7.804210000+$7.7750 -
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Category: Power diodeDescription: IDH05G120C5 Series 1200 V 5 A 5th generation ThinQ! ™ SiC Schottky diode TO-220-257215+$18.277750+$17.4966200+$17.0592500+$16.94991000+$16.84052500+$16.71555000+$16.63747500+$16.5593 -
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Category: Power diodeDescription: IDH10G120C5 Series 1200 V 10A 5th generation ThinQ! ™ SiC Schottky diode TO-220-230195+$25.203050+$24.1259200+$23.5228500+$23.37201000+$23.22122500+$23.04895000+$22.94127500+$22.8335 -
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Category: TVSdiodeDescription: The second generation ThinQ! SiC Schottky diode 2nd Generation thinQ! SiC Schottky Diode27105+$33.269050+$31.8472200+$31.0510500+$30.85201000+$30.65292500+$30.42555000+$30.28337500+$30.1411 -
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Category: Schottky diodeDescription: INFINEON IDH04G65C5XKSA1 Diode, silicon carbide Schottky, thinQ 5G 650V series, single, 650 V, 4 A, 7 nC, TO-220373610+$11.1648100+$10.6066500+$10.23441000+$10.21582000+$10.14145000+$10.04837500+$9.973910000+$9.9367 -
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Category: TVSdiodeDescription: The 2nd Generation ThinQ SiC Schottky Diode75525+$33.302950+$31.8797200+$31.0827500+$30.88341000+$30.68422500+$30.45655000+$30.31427500+$30.1718 -
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Category: TVSdiodeDescription: Schottky diode and rectifier SIC DIODES80781+$49.584510+$46.7395100+$44.6260250+$44.3009500+$43.97571000+$43.60992500+$43.28485000+$43.0816 -
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Category: TVSdiodeDescription: ThinQ! TM SiC Schottky diode thinQ! TM SiC Schottky Diode79141+$350.716710+$341.567550+$334.5532100+$332.1134200+$330.2836500+$327.84381000+$326.31902000+$324.7941 -
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Category: TVSdiodeDescription: INFINEON IDH04G65C5 Diode, silicon carbide Schottky, thinQ 5G 650V series, single, 650 V, 4 A, 7 nC, TO-220473910+$7.3956100+$7.0258500+$6.77931000+$6.76702000+$6.71775000+$6.65607500+$6.606710000+$6.5821 -
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Category: TVSdiodeDescription: The 2nd Generation ThinQ SiC Schottky Diode396510+$6.1224100+$5.8163500+$5.61221000+$5.60202000+$5.56125000+$5.51027500+$5.469310000+$5.4489 -
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Category: TVSdiodeDescription: INFINEON IDH02SG120 Diode, silicon carbide Schottky, thinQ 2G 1200V series, single, 1.2 kV, 2 A, 7.2 nC, TO-22041595+$19.275850+$18.4520200+$17.9907500+$17.87541000+$17.76012500+$17.62835000+$17.54597500+$17.4635 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon64925+$26.110950+$24.9950200+$24.3702500+$24.21391000+$24.05772500+$23.87925000+$23.76767500+$23.6560 -
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Category: TVSdiodeDescription: The third generation ThinQ! TM SiC Schottky diode 3rd Generation thinQ! TM SiC Schottky Diode64905+$20.916150+$20.0222200+$19.5217500+$19.39651000+$19.27142500+$19.12845000+$19.03907500+$18.9496 -
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Category: TVSdiodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon54905+$27.700950+$26.5171200+$25.8542500+$25.68851000+$25.52272500+$25.33335000+$25.21497500+$25.0966 -
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Category: TVSdiodeDescription: INFINEON IDH08SG60C Diode, silicon carbide Schottky, SIC, thinQ 3G 600V series, single, 600V, 8A, 12 nC, TO-22087135+$17.582850+$16.8314200+$16.4106500+$16.30541000+$16.20022500+$16.08005000+$16.00487500+$15.9297 -
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Category: TVSdiodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon315010+$7.4124100+$7.0418500+$6.79471000+$6.78232000+$6.73295000+$6.67127500+$6.621710000+$6.5970 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon78895+$19.479350+$18.6469200+$18.1807500+$18.06421000+$17.94762500+$17.81445000+$17.73127500+$17.6479 -
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Category: rectifier diodeDescription: The second generation ThinQ! SiC Schottky diode 2nd Generation thinQ! SiC Schottky Diode6168 -
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Category: TVSdiodeDescription: The second generation ThinQ! SiC Schottky diode 2nd Generation thinQ! SiC Schottky Diode1733 -
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Category: Small signal diodeDescription: Fast Switching EmCon Diode72185+$14.326750+$13.7144200+$13.3715500+$13.28581000+$13.20012500+$13.10225000+$13.04097500+$12.9797
